| PART |
Description |
Maker |
| GS8182S18GD-267 GS8182S18GD-267T GS8182S18GD-267I |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165
18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z1 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
|
| PLL103-03 PLL103-03XC PLL103-03XI PLL103-03XM |
DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS
|
PhaseLink Corporation
|
| K4H1G0838M-TC/LB0 K4H1G0838M-TC/LA2 K4H1G0838M-TC/ |
DIODE ZENER DUAL COMMON-CATHODE 300mW 43Vz 5mA-Izt 0.0698 0.1uA-Ir 32 SOT-23 3K/REEL
1Gb M-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8180Q36D-167I GS8180Q36D-200 GS8180Q36D-200I |
167MHz 512K x 36 18MB sigmaQuad SRAM
200MHz 512K x 36 18MB sigmaQuad SRAM
|
GSI Technology
|
